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NE4210S01-T1B データシート - California Eastern Laboratories.

部品番号コンポーネント説明メーカー
NE4210S01-T1B SUPER LOW NOISE HJ FET CEL
California Eastern Laboratories. CEL
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NE4210S01-T1B データシート PDF : NE4210S01-T1B pdf   
NE4210S01 image

DESCRIPTION
NECS NE4210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low noise figure and high associated gain make it suitable for DBS and commercial systems. The NE4210S01 is housed in a low cost plastic package which is available in tape and reel.

FEATURES
• SUPER LOW NOISE FIGURE: 0.50 dB TYP at f = 12 GHz
• HIGH ASSOCIATED GAIN: 13.0 dB TYP at f = 12 GHz
• GATE LENGTH: LG ≤ 0.20 µm
• GATE WIDTH: WG = 160 µm

 

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