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LC821 データシート - Polyfet RF Devices

部品番号コンポーネント説明メーカー
LC821 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Polyfet-RF
Polyfet RF Devices Polyfet-RF
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LC821 データシート PDF : LC821 pdf   
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General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"™ process features low feedback and output capacitances resulting in high Ft transistors with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
8.0 Watts Single Ended
Package Style AC

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

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