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L2801 データシート - Polyfet RF Devices

部品番号コンポーネント説明メーカー
L2801 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Polyfet-RF
Polyfet RF Devices Polyfet-RF
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L2801 データシート PDF : L2801 pdf   
L2801 image

15.0 Watts Single Ended Package Style S02

HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE

General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

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