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HY6264A-I Datasheet PDF - Hyundai Micro Electronics

部品番号
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HY6264A-I
Hyundai
Hyundai Micro Electronics 
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HY6264A-I Datasheet PDF : HY6264A-I pdf     
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DESCRIPTION
The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundais high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit design techniques, yields maximum access time of 70ns.

 

部品番号
コンポーネント説明
PDF
メーカー
8K X 8 BIT LOW POWER CMOS SRAM
Unspecified
8K X 8 BIT HIGH SPEED CMOS SRAM
Alliance Semiconductor
8K X 8 BIT LOW POWER CMOS SRAM
Alliance Semiconductor
8K x 8-Bit CMOS SRAM
Hynix Semiconductor
8K X 8 BIT LOW POWER CMOS SRAM
Alliance Semiconductor
8K X 8 CMOS SRAM
ROHM Semiconductor
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package)
MITSUBISHI ELECTRIC
8K x 8 Speed CMOS SRAM
UMC Corporation
8K X 8 BIT CMOS SRAM
AMIC Technology
CMOS 8K x 8 ZEROPOWER SRAM
STMicroelectronics

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