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HM62W16255HI データシート - Hitachi -> Renesas Electronics

HM62W16255HI 4M High Speed SRAM (256-kword × 16-bit) Hitachi
Hitachi -> Renesas Electronics Hitachi
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HM62W16255HI データシート PDF : HM62W16255HI pdf   
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The HM62W16255HI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII.

• Single 3.3 V supply: 3.3 V ± 0.3V
• Access time: 15 ns (max)
• Completely static memory
    - No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
    - All inputs and outputs
• Operating current: 160 mA (max)
• TTL standby current: 50 mA (max)
• CMOS standby current: 5 mA (max)
• Center VCC and VSS type pinout
• Temperature range: –40 to 85°C


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