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FQP7N10 データシート - Fairchild Semiconductor

部品番号コンポーネント説明メーカー
FQP7N10 100V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
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FQP7N10 データシート PDF : FQP7N10 pdf   
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

Features
• 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V
• Low gate charge ( typical 5.8 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

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