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EFC240B-100F データシート - Excelics Semiconductor, Inc.

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EFC240B-100F Low Distortion GaAs Power FET Excelics
Excelics Semiconductor, Inc. 
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EFC240B-100F データシート PDF : EFC240B-100F pdf   
EFC240B-100F image

FEATURES
• NON-HERMETIC 180MIL METAL FLANGE PACKAGE
• +31.0 dBm TYPICAL OUTPUT POWER
• 16.5 dB TYPICAL POWER GAIN AT 2GHz
• 0.3 x 2400 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY

 

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