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EFC120B-100F データシート - Excelics Semiconductor, Inc.

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EFC120B-100F Low Distortion GaAs Power FET Excelics
Excelics Semiconductor, Inc. 
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EFC120B-100F データシート PDF : EFC120B-100F pdf   
EFC120B-100F image

Low Distortion GaAs Power FET

• HERMETIC 100mil CERAMIC FLANGE PACKAGE
• +28.0dBm TYPICAL OUTPUT POWER
• HIGH BVgd FOR 10V BIAS
• 9.0dB TYPICAL POWER GAIN AT 8GHz
• 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY

 

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