The AM83135-010 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications.
This device is characterized at 100µsec pulse width and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles, and temperatures, and can withstand a 3:1 output VSWR with a + 1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).
The AM83135-010 is supplied in the IMPAC™ hermetic metal/ceramic package with internal input/output impedance matching circuitry, and is intended for military and other high reliability applications.
■ REFRACTORY/GOLD METALLIZATION
■ EMITTER SITE BALLASTED
■ LOW THERMAL RESISTANCE
■ INPUT/OUTPUT MATCHING
■ OVERLAY GEOMETRY
■ METAL/CERAMIC HERMETIC PACKAGE
■ POUT = 10 W MIN. WITH 5.0 dB GAIN